Piezoelectric field-induced quantum-confined stark effect in InGaN/GaN multiple quantum wells

C. Y. Lai*, T. M. Hsu, Wen-Hao Chang, K. U. Tseng, C. M. Lee, C. C. Chuo, J. I. Chyi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


In this paper, we present an experimental evidence for the piezoelectric field-induced quantum-confined Stark effect (QCSE) on InGaN/GaN quantum wells. The optical transitions of In0.23Ga0.77N/GaN p-i-n MQWs were studied by using modulation spectroscopy (electrotransmission ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Clear energy blue shifts in accordance with increasing reversed bias are observed in the ET spectra. The energy blue shift is attributed to the QCSE. The strength of piezoelectric field is found to be 1.9 MV/cm. We also show experimentally how the piezoelectric field affects the energy shift in the strained MQWs.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number1
StatePublished - Nov 2001


  • 78.65.–j
  • 78.20.Jq
  • 78.67.De
  • S7.14

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