Piezoelectric Effects in GaAs FET's and Their Role in Orientation-Dependent Device Characteristics

Peter M. Asbeck, Chien Ping Lee, Mau-Chung Chang

Research output: Contribution to journalArticle

86 Scopus citations

Abstract

Elastic stresses are frequently induced in GaAs substrates during the fabrication of FET's, particularly in the vicinity of windows in dielectric overlayers. It is shown here that these stresses can produce piezoelectric charge densities of such magnitude to appreciably shift the pinchoff voltage and saturation current of FET's. These shifts are of opposite sign for FET's oriented along [011] and [011] directions on (100) GaAs substrates, and have characteristics similar to experimentally observed orientation effects on FET's.

Original languageEnglish
Pages (from-to)1377-1380
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume31
Issue number10
DOIs
StatePublished - 1 Jan 1984

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