This paper describes the spatially and temporally resolved images obtained from submicron NFETS and a CMOS ring-oscillator circuit. The spatial and temporal information is supplemented by spectral measurements obtained using a set of optical band-pass filters. The intensity of luminescence has been observed on individual transistors with gate-lengths down to 0.2 microns. The time-resolution of approximately 100 ps is sufficient to observe the response of individual invertors for gate lengths of 0.8 microns and even lower. Preliminary work on spectral distributions of emission from both the ring oscillator and NFET indicated a peak around 850 nm. This may be limited on the long-wavelength side by the response of the photomultiplier photocathode, indicating that better sensitivity could be achieved with extended infra-red sensitivity. The spectral distribution is explained with reference to current theories.
|Number of pages||6|
|Journal||Proceedings of SPIE - The International Society for Optical Engineering|
|State||Published - 1 Jan 2000|
|Event||Optoelectronic Materials and Devices II - Taipei, Taiwan|
Duration: 26 Jul 2000 → 28 Jul 2000