Picosecond imaging of hot electron emission from CMOS circuitry

Kartik Ramanujachar*, Dolf Landheer, Sylvain Raymond, Sylvain Charbonneau, Peter Coleridge, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


This paper describes the spatially and temporally resolved images obtained from submicron NFETS and a CMOS ring-oscillator circuit. The spatial and temporal information is supplemented by spectral measurements obtained using a set of optical band-pass filters. The intensity of luminescence has been observed on individual transistors with gate-lengths down to 0.2 microns. The time-resolution of approximately 100 ps is sufficient to observe the response of individual invertors for gate lengths of 0.8 microns and even lower. Preliminary work on spectral distributions of emission from both the ring oscillator and NFET indicated a peak around 850 nm. This may be limited on the long-wavelength side by the response of the photomultiplier photocathode, indicating that better sensitivity could be achieved with extended infra-red sensitivity. The spectral distribution is explained with reference to current theories.

Original languageEnglish
Pages (from-to)298-303
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1 Jan 2000
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 26 Jul 200028 Jul 2000

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