Physics and modeling of Ge-on-Insulator MOSFETs

Albert Chin*, H. L. Kao, Y. Y. Tseng, D. S. Yu, C. C. Chen, S. P. McAlister, C. C. Chi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations

Abstract

We have used process and device simulation tools (TSupreme and Medici) to analyze the measured DC characteristics of Ge-on-Insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m*) and smaller Ge energy bandgap - however this also causes a larger off-state Ids leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.

Original languageEnglish
Title of host publicationProceedings of ESSDERC 2005
Subtitle of host publication35th European Solid-State Device Research Conference
Pages285-288
Number of pages4
DOIs
StatePublished - 1 Dec 2005
EventESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France
Duration: 12 Sep 200516 Sep 2005

Publication series

NameProceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume2005

Conference

ConferenceESSDERC 2005: 35th European Solid-State Device Research Conference
CountryFrance
CityGrenoble
Period12/09/0516/09/05

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    Chin, A., Kao, H. L., Tseng, Y. Y., Yu, D. S., Chen, C. C., McAlister, S. P., & Chi, C. C. (2005). Physics and modeling of Ge-on-Insulator MOSFETs. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 285-288). [1546641] (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546641