Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (N it ) and bulk oxide charge Q ox creation in the channel and in the drift regions separately. The growth rates of N it and Q ox are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum I g stress causes the largest drain current and subthreshold slope degradation because of both N it generation in the channel and Q ox creation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation.
|Number of pages||5|
|Journal||IEEE Transactions on Device and Materials Reliability|
|State||Published - 1 Sep 2006|
- Hot-carrier degradation
- Lateral diffused MOS (LDMOS)
- Three-region charge pumping (CP)