Physics and characterization of various hot-carrier degradation modes in LDMOS by using a three-region charge-pumping technique

Chih Chang Cheng*, J. F. Lin, Ta-Hui Wang, T. H. Hsieh, J. T. Tzeng, Y. C. Jong, R. S. Liou, Samuel C. Pan, S. L. Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

Degradation of lateral diffused MOS transistors in various hot-carrier stress modes is investigated. A novel three-region charge-pumping technique is proposed to characterize interface trap (N it ) and bulk oxide charge Q ox creation in the channel and in the drift regions separately. The growth rates of N it and Q ox are extracted from the proposed method. A two-dimensional numerical device simulation is performed to gain insight into device degradation characteristics in different stress conditions. This paper shows that a maximum I g stress causes the largest drain current and subthreshold slope degradation because of both N it generation in the channel and Q ox creation in the bird's beak region. The impact of oxide trap property and location on device electrical characteristics is analyzed from measurement and simulation.

Original languageEnglish
Article number1717483
Pages (from-to)358-362
Number of pages5
JournalIEEE Transactions on Device and Materials Reliability
Volume6
Issue number3
DOIs
StatePublished - 1 Sep 2006

Keywords

  • Hot-carrier degradation
  • Lateral diffused MOS (LDMOS)
  • Three-region charge pumping (CP)

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