Physical properties of InGaO3(ZnO)m with various content ratio grown by PAMBE

Chu Shou Yang*, Shin Jung Huang, Yu Chung Kao, Guan He Chen, Wu-Ching Chou

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The quaternary compound semiconductor (InGaO3(ZnO)m); m=1,2,3...)(IGZO) thin films were fabricated by plasma-assisted molecular beam epitaxy. First, the IGZO thin films were grown under the variation of gallium cell temperature to evaluate the fundamental properties of IGZO. A phase transformation between crystalline and amorphous is observed when the gallium content ratio is higher than 28 at%. It revealed redundancy in the metal, which would self-assist the channel or defect state to destroy the crystal structure. The highest mobility of 74.3 cm2/V s was obtained at 28 at% of gallium. By tuning the element content of quaternary compounds, the ternary plots distribution of IGZO thin films exhibits an amorphous structure in most regions. Therefore, the stoichiometric condition of IGZO, which is 1:1:1:4, is demonstrated at the amorphous structure. Additionally, it transitions to crystalline structure after a 1100 °C annealing process.

Original languageEnglish
Pages (from-to)258-261
Number of pages4
JournalJournal of Crystal Growth
Volume425
DOIs
StatePublished - 28 Jul 2015

Keywords

  • A3. Molecular beam epitaxy
  • IGZO

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