Stress induced leakage currents (SILC) in very thin silicon nitride gate dielectrics were studied. A model was proposed to explain the physical origin of SILC and noisy breakdown. A large number of weak conduction paths were found to contribute to SILC in silicon nitride. Soft or noisy breakdown occurred when a strong tunnel path was created by electrical stress.
|Number of pages||2|
|State||Published - 1 Jan 2001|
|Event||Device Research Conference (DRC) - Notre Dame, IN, United States|
Duration: 25 Jun 2001 → 27 Jun 2001
|Conference||Device Research Conference (DRC)|
|City||Notre Dame, IN|
|Period||25/06/01 → 27/06/01|