Physical origin of SILC and noisy breakdown in very thin silicon nitride gate dielectric

I. Polishchuk, T. J. King, Chen-Ming Hu

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

Stress induced leakage currents (SILC) in very thin silicon nitride gate dielectrics were studied. A model was proposed to explain the physical origin of SILC and noisy breakdown. A large number of weak conduction paths were found to contribute to SILC in silicon nitride. Soft or noisy breakdown occurred when a strong tunnel path was created by electrical stress.

Original languageEnglish
Pages20-21
Number of pages2
StatePublished - 1 Jan 2001
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: 25 Jun 200127 Jun 2001

Conference

ConferenceDevice Research Conference (DRC)
CountryUnited States
CityNotre Dame, IN
Period25/06/0127/06/01

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