Physical origin of SILC and noisy breakdown in very thin silicon nitride gate dielectric

I. Polishchuk; T. J. King; Chen-Ming Hu

Physical origin of SILC and noisy breakdown in very thin silicon nitride gate dielectric

I. Polishchuk, T. J. King, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

4 Scopus citations

Abstract

Stress induced leakage currents (SILC) in very thin silicon nitride gate dielectrics were studied. A model was proposed to explain the physical origin of SILC and noisy breakdown. A large number of weak conduction paths were found to contribute to SILC in silicon nitride. Soft or noisy breakdown occurred when a strong tunnel path was created by electrical stress.

Original language	English
Pages	20-21
Number of pages	2
State	Published - 1 Jan 2001
Event	Device Research Conference (DRC) - Notre Dame, IN, United States Duration: 25 Jun 2001 → 27 Jun 2001

Conference

Conference	Device Research Conference (DRC)
Country	United States
City	Notre Dame, IN
Period	25/06/01 → 27/06/01

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title = "Physical origin of SILC and noisy breakdown in very thin silicon nitride gate dielectric",

abstract = "Stress induced leakage currents (SILC) in very thin silicon nitride gate dielectrics were studied. A model was proposed to explain the physical origin of SILC and noisy breakdown. A large number of weak conduction paths were found to contribute to SILC in silicon nitride. Soft or noisy breakdown occurred when a strong tunnel path was created by electrical stress.",

author = "I. Polishchuk and King, {T. J.} and Chen-Ming Hu",

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T1 - Physical origin of SILC and noisy breakdown in very thin silicon nitride gate dielectric

AU - Polishchuk, I.

AU - King, T. J.

AU - Hu, Chen-Ming

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Y1 - 2001/1/1

N2 - Stress induced leakage currents (SILC) in very thin silicon nitride gate dielectrics were studied. A model was proposed to explain the physical origin of SILC and noisy breakdown. A large number of weak conduction paths were found to contribute to SILC in silicon nitride. Soft or noisy breakdown occurred when a strong tunnel path was created by electrical stress.

AB - Stress induced leakage currents (SILC) in very thin silicon nitride gate dielectrics were studied. A model was proposed to explain the physical origin of SILC and noisy breakdown. A large number of weak conduction paths were found to contribute to SILC in silicon nitride. Soft or noisy breakdown occurred when a strong tunnel path was created by electrical stress.

UR - http://www.scopus.com/inward/record.url?scp=0034873613&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034873613

SP - 20

EP - 21

Y2 - 25 June 2001 through 27 June 2001

ER -

Physical origin of SILC and noisy breakdown in very thin silicon nitride gate dielectric

Abstract

Conference

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