Abstract
Stress induced leakage currents (SILC) in very thin silicon nitride gate dielectrics were studied. A model was proposed to explain the physical origin of SILC and noisy breakdown. A large number of weak conduction paths were found to contribute to SILC in silicon nitride. Soft or noisy breakdown occurred when a strong tunnel path was created by electrical stress.
Original language | English |
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Pages | 20-21 |
Number of pages | 2 |
State | Published - 1 Jan 2001 |
Event | Device Research Conference (DRC) - Notre Dame, IN, United States Duration: 25 Jun 2001 → 27 Jun 2001 |
Conference
Conference | Device Research Conference (DRC) |
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Country | United States |
City | Notre Dame, IN |
Period | 25/06/01 → 27/06/01 |