Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

Chin Ching Lin*, San-Yuan Chen, Syh Yuh Cheng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

30 Scopus citations


ZnO films were implanted with phosphorus in the range from 5×10 12 to 5×10 15 cm -2 . Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5×10 18 ions/cm 3 ), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5×10 18 ions/cm 3 ), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping.

Original languageEnglish
Pages (from-to)405-409
Number of pages5
JournalApplied Surface Science
Issue number1-4 SPEC. ISS.
StatePublished - 15 Nov 2004
EventAPHYS 2003 - Badajoz, Spain
Duration: 13 Oct 200318 Oct 2003


  • Defect chemistry
  • Phosphorus implantation
  • Photoluminescence
  • ZnO

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