Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

Chin Ching Lin; San-Yuan Chen; Syh Yuh Cheng

doi:10.1016/j.apsusc.2004.05.255

Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

Chin Ching Lin^*, San-Yuan Chen, Syh Yuh Cheng

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

30 Scopus citations

Abstract

ZnO films were implanted with phosphorus in the range from 5×10 ¹² to 5×10 ¹⁵ cm ^-2 . Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5×10 ¹⁸ ions/cm ³ ), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5×10 ¹⁸ ions/cm ³ ), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping.

Original language	English
Pages (from-to)	405-409
Number of pages	5
Journal	Applied Surface Science
Volume	238
Issue number	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.apsusc.2004.05.255
State	Published - 15 Nov 2004
Event	APHYS 2003 - Badajoz, Spain Duration: 13 Oct 2003 → 18 Oct 2003

Keywords

Defect chemistry
Phosphorus implantation
Photoluminescence
ZnO

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@article{bed95e638f8440d1a04825bb9f24b903,

title = "Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films",

abstract = " ZnO films were implanted with phosphorus in the range from 5×10 12 to 5×10 15 cm -2 . Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5×10 18 ions/cm 3 ), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5×10 18 ions/cm 3 ), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping.",

keywords = "Defect chemistry, Phosphorus implantation, Photoluminescence, ZnO",

author = "Lin, {Chin Ching} and San-Yuan Chen and Cheng, {Syh Yuh}",

year = "2004",

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doi = "10.1016/j.apsusc.2004.05.255",

language = "English",

volume = "238",

pages = "405--409",

journal = "Applied Surface Science",

issn = "0169-4332",

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number = "1-4 SPEC. ISS.",

note = "null ; Conference date: 13-10-2003 Through 18-10-2003",

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TY - JOUR

T1 - Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

AU - Lin, Chin Ching

AU - Chen, San-Yuan

AU - Cheng, Syh Yuh

PY - 2004/11/15

Y1 - 2004/11/15

N2 - ZnO films were implanted with phosphorus in the range from 5×10 12 to 5×10 15 cm -2 . Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5×10 18 ions/cm 3 ), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5×10 18 ions/cm 3 ), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping.

AB - ZnO films were implanted with phosphorus in the range from 5×10 12 to 5×10 15 cm -2 . Effect of phosphorus concentration on structural characteristics and photoelectric behavior of phosphorus-implanted ZnO films under different atmosphere and annealing treatment was investigated. It has been demonstrated that below solubility (1.5×10 18 ions/cm 3 ), the defect formation will be dominated by annealing atmosphere and more defects can be formed in oxygen ambient than in nitrogen atmosphere as revealed from PL spectra. However, excess phosphorus doping, above solubility (1.5×10 18 ions/cm 3 ), will induce the formation of the phosphide compounds in ZnO films and seriously deteriorate the crystallinity and optical property of the films. However, a high-resistive but not p-type ZnO film is obtained by phosphorus doping.

KW - Defect chemistry

KW - Phosphorus implantation

KW - Photoluminescence

KW - ZnO

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