The electrical features of strontium compounds films were studied. The films on aluminum compound were annealed at high temperature. To study current-voltage characteristics, the leakage current was considered as the most important property for memory capacitor. Bismuth-rich strontium compound exhibited a larger ferroelectric memory window compared to SBT films at a higher annealing temperature. The formation of rod-shape grains and amorphous SBT layers caused the reduction in leakage current.