Physical characteristics and electrical properties of Sr 0.8Bi2+xTa2O9 films on Al 2O3/Si annealed at high temperature

Ban Chiang Lan, Chih Yuan Huang, San-Yuan Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

The electrical features of strontium compounds films were studied. The films on aluminum compound were annealed at high temperature. To study current-voltage characteristics, the leakage current was considered as the most important property for memory capacitor. Bismuth-rich strontium compound exhibited a larger ferroelectric memory window compared to SBT films at a higher annealing temperature. The formation of rod-shape grains and amorphous SBT layers caused the reduction in leakage current.

Original languageEnglish
Pages (from-to)6735-6740
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number10
DOIs
StatePublished - 15 Nov 2003

Fingerprint Dive into the research topics of 'Physical characteristics and electrical properties of Sr <sub>0.8</sub>Bi<sub>2+x</sub>Ta<sub>2</sub>O<sub>9</sub> films on Al <sub>2</sub>O<sub>3</sub>/Si annealed at high temperature'. Together they form a unique fingerprint.

Cite this