Physical characteristics and electrical properties of Sr 0.8Bi2+xTa2O9 films on Al 2O3/Si annealed at high temperature

Ban Chiang Lan, Chih Yuan Huang, San-Yuan Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The electrical features of strontium compounds films were studied. The films on aluminum compound were annealed at high temperature. To study current-voltage characteristics, the leakage current was considered as the most important property for memory capacitor. Bismuth-rich strontium compound exhibited a larger ferroelectric memory window compared to SBT films at a higher annealing temperature. The formation of rod-shape grains and amorphous SBT layers caused the reduction in leakage current.

Original languageEnglish
Pages (from-to)6735-6740
Number of pages6
JournalJournal of Applied Physics
Issue number10
StatePublished - 15 Nov 2003

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