The physical and electrical properties of Ni silicides, reactively formed by a thin Ni layer of 3 nm, have been investigated. The existence of NiSi 2 phase has been confirmed at low temperature annealing by x-ray photoelectron spectroscopy. The silicides have shown flat surfaces up to an annealing temperature of 800 °C and a stable sheet resistance can be achieved. The Schottky barrier heights extracted from diode characteristics have shown stable values against annealing temperature owing to the stability of the film with an ideality factor nearly to unit.
|Journal||Journal of Physics: Conference Series|
|State||Published - 2013|
|Event||15th International Conference on Thin Films, ICTF 2011 - Kyoto, Japan|
Duration: 8 Nov 2011 → 11 Nov 2011