Photovoltaic properties of lateral ultra-thin Si p-i-n structure

Suguru Tatsunokuchi*, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of i-region length (Li) in lateral ultra-thin Si p-i-n diodes on the photovoltaic (PV) properties has been investigated. The short-circuit current (ISC) has increased along with Li and has shown a saturation characteristic over Li of 5 μm. On the other hand, it has been found that the open-circuit voltage (Voc) becomes constant above Li = 2 μm. The Isc behavior can be modeled by the recombination in the i-region in combination with reduced lateral electric field.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2018, CSTIC 2018
EditorsHanming Wu, Peilin Song, Qinghuang Lin, Yuchun Wang, Cor Claeys, Hsiang-Lang Lung, Ying Zhang, Steve Liang, Yiyu Shi, Ru Huang, Zhen Guo, Kafai Lai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781538653081
DOIs
StatePublished - 29 May 2018
Event2018 China Semiconductor Technology International Conference, CSTIC 2018 - Shanghai, China
Duration: 11 Mar 201812 Mar 2018

Publication series

NameChina Semiconductor Technology International Conference 2018, CSTIC 2018

Conference

Conference2018 China Semiconductor Technology International Conference, CSTIC 2018
CountryChina
CityShanghai
Period11/03/1812/03/18

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  • Cite this

    Tatsunokuchi, S., Muneta, I., Hoshii, T., Wakabayashi, H., Tsutsui, K., Iwai, H., & Kakushima, K. (2018). Photovoltaic properties of lateral ultra-thin Si p-i-n structure. In H. Wu, P. Song, Q. Lin, Y. Wang, C. Claeys, H-L. Lung, Y. Zhang, S. Liang, Y. Shi, R. Huang, Z. Guo, & K. Lai (Eds.), China Semiconductor Technology International Conference 2018, CSTIC 2018 (pp. 1-3). (China Semiconductor Technology International Conference 2018, CSTIC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSTIC.2018.8369314