Photovoltaic performance of HWCVD deposited c-Si:H solar cells using graded hydrogen dilution window-layer

Uio Pu Chiou*, Jia Min Shieh, Fu-Ming Pan, Wen Hsien Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The study prepared thin film solar cells using hydrogenated microcrystalline silicon (c-Si:H) by hot-wire chemical vapor deposition (HWCVD). Hydrogen dilution profiling was used to deposit the boron-doped p-layer on the SnO2:F substrate. The c-Si:H solar cell with triple hydrogen dilution grades in the p-layer has a high photoconversion efficiency of 4.5 as a result of the improvement in the electrical and the antireflection properties of the cell. The short circuit current (Jsc) and the open circuit voltage (Voc) of the solar cell are 19.7 mA/cm2 and 450 mV, respectively. The graded hydrogen concentration in the p-layer improves the crystallinity and the antireflection of the absorbing layer (intrinsic layer), thereby enhancing the Jsc. The high Voc is ascribed to that a high hydrogen dilution ratio may enhance boron doping in the p-layer leading to the improvement of the Voc.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number10
DOIs
StatePublished - 31 Aug 2011

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