Photovoltaic effects in BiFeO 3

S. Y. Yang, L. W. Martin, S. J. Byrnes, T. E. Conry, S. R. Basu, D. Paran, L. Reichertz, J. Ihlefeld, C. Adamo, A. Melville, Ying-hao Chu, C. H. Yang, J. L. Musfeldt, D. G. Schlom, J. W. Ager, R. Ramesh

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We report a photovoltaic effect in ferroelectric BiFeO 3 thin films. The all-oxide heterostructures with SrRuO 3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages ∼0.8-0.9 V and external quantum efficiencies up to ∼10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO 3 /tin doped indium oxide interface.

Original languageEnglish
Article number062909
JournalApplied Physics Letters
Issue number6
StatePublished - 27 Aug 2009

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