Photostability improvement of a-InGaZnO TFTs by introducing a transparent UV shielding layer

Min Yen Tsai, Yun Chu Tsai, Li Feng Teng, Po-Tsun Liu, Han Ping D. Shieh

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The photosensitivity and stability of a-IGZO TFTs can be efficiently improved by introducing a transparent passivation layer made of Mo-doped ZnO (MZO). Under a negative bias illumination stress (NBIS) with photoenergy (∼3.4eV), the ΔVth of MZO-passivated TFTs was 0.39 V after 5400 sec of NBIS, whereas the unpassivated TFTs showed a large ΔV th of -10.56 V. Moreover, the unpassivated TFTs exhibited a slight positive Vth shift of 1.69 V after 5400 sec of positive bias stress (PBS), while the ΔVth of MZO-passivated TFTs was only 0.45 V.

Original languageEnglish
Pages (from-to)178-181
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume44
Issue number1
DOIs
StatePublished - 1 Jan 2013

Keywords

  • a-IGZO
  • negative bias illumination stress (NBIS)
  • passivation layer
  • photosensitivity
  • transparent UV shielding layer

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