Photosensitivity analysis of low-temperature poly-si thin-film transistor based on the unit-lux-current

Ya-Hsiang Tai*, Yan Fu Kuo, Yun Hsiang Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In this paper, the photosensitive effect of n-type lowtemperature polycrystalline-silicon thin-film transistors (TFTs) is investigated. A novel layout is adopted to demonstrate that the photo leakage current occurs in the depletion region at the drain junction. Based on the Poole-Frenkel effect lowering of a coulombic barrier and phonon-assisted tunneling, it is discovered that the photosensitivity behavior for poly-Si TFT is dependent on the gate and drain bias. However, this photoinduced leakage current behavior is not included in the present SPICE device model. Therefore, a new parameter, unit-lux-current (ULC), is proposed to depict the photoinduced current. Its dependence on the gate/drain bias and temperature is discussed, and the equation of ULC is further derived, which has good agreement with the experimental data. A qualitative deduction is developed to account for the photo leakage mechanism. ULC variation with respect to defect states in the drain region is also discussed.

Original languageEnglish
Pages (from-to)50-56
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume56
Issue number1
DOIs
StatePublished - 1 Jan 2009

Keywords

  • Leakage current
  • Photo sensitivity
  • Poly-Si thinfilm transistor (TFT)

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