Photoresponses in poly-Si phototransistors incorporating germanium quantum dots in the gate dielectrics

S. S. Tseng; I. H. Chen; Pei-Wen Li

doi:10.1109/NANO.2008.22

Photoresponses in poly-Si phototransistors incorporating germanium quantum dots in the gate dielectrics

S. S. Tseng, I. H. Chen, Pei-Wen Li

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Poly-Si thin film transistors (TFTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated as efficient blue to near ultraviolet phototransistors for light detection and amplification. The drain current measured under 405 nm light irradiation of 25 μW improves ~45% as compared to that measured in darkness at V_GS = -3 V. The poly-Si TFTs exhibited strong photoresponses in drive current under 405~450 nm light illumination, resulting from photoexcited holes in Ge QDs flow into the channel layer of the transistor via the gate bias to increase the channel mobile carriers.

Original language	English
Title of host publication	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages	48-50
Number of pages	3
DOIs	https://doi.org/10.1109/NANO.2008.22
State	Published - 10 Nov 2008
Event	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States Duration: 18 Aug 2008 → 21 Aug 2008

Publication series

Name	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Conference

Conference	2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Country	United States
City	Arlington, TX
Period	18/08/08 → 21/08/08

Access to Document

10.1109/NANO.2008.22

Link to publication in Scopus

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@inproceedings{f54f5fc1c63241ccb5083c24935a36fd,

title = "Photoresponses in poly-Si phototransistors incorporating germanium quantum dots in the gate dielectrics",

abstract = "Poly-Si thin film transistors (TFTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated as efficient blue to near ultraviolet phototransistors for light detection and amplification. The drain current measured under 405 nm light irradiation of 25 μW improves ~45% as compared to that measured in darkness at VGS = -3 V. The poly-Si TFTs exhibited strong photoresponses in drive current under 405~450 nm light illumination, resulting from photoexcited holes in Ge QDs flow into the channel layer of the transistor via the gate bias to increase the channel mobile carriers.",

author = "Tseng, {S. S.} and Chen, {I. H.} and Pei-Wen Li",

year = "2008",

month = nov,

day = "10",

doi = "10.1109/NANO.2008.22",

language = "English",

isbn = "9781424421046",

series = "2008 8th IEEE Conference on Nanotechnology, IEEE-NANO",

pages = "48--50",

booktitle = "2008 8th IEEE Conference on Nanotechnology, IEEE-NANO",

note = "null ; Conference date: 18-08-2008 Through 21-08-2008",

}

Tseng, SS, Chen, IH & Li, P-W 2008, Photoresponses in poly-Si phototransistors incorporating germanium quantum dots in the gate dielectrics. in 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO., 4617004, 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, pp. 48-50, 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO, Arlington, TX, United States, 18/08/08. https://doi.org/10.1109/NANO.2008.22

Photoresponses in poly-Si phototransistors incorporating germanium quantum dots in the gate dielectrics. / Tseng, S. S.; Chen, I. H.; Li, Pei-Wen.

2008 8th IEEE Conference on Nanotechnology, IEEE-NANO. 2008. p. 48-50 4617004 (2008 8th IEEE Conference on Nanotechnology, IEEE-NANO).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Poly-Si thin film transistors (TFTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated as efficient blue to near ultraviolet phototransistors for light detection and amplification. The drain current measured under 405 nm light irradiation of 25 μW improves ~45% as compared to that measured in darkness at VGS = -3 V. The poly-Si TFTs exhibited strong photoresponses in drive current under 405~450 nm light illumination, resulting from photoexcited holes in Ge QDs flow into the channel layer of the transistor via the gate bias to increase the channel mobile carriers.

AB - Poly-Si thin film transistors (TFTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated as efficient blue to near ultraviolet phototransistors for light detection and amplification. The drain current measured under 405 nm light irradiation of 25 μW improves ~45% as compared to that measured in darkness at VGS = -3 V. The poly-Si TFTs exhibited strong photoresponses in drive current under 405~450 nm light illumination, resulting from photoexcited holes in Ge QDs flow into the channel layer of the transistor via the gate bias to increase the channel mobile carriers.

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