Photoresponses in poly-Si phototransistors incorporating germanium quantum dots in the gate dielectrics

S. S. Tseng, I. H. Chen, Pei-Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Poly-Si thin film transistors (TFTs) incorporating germanium (Ge) quantum dots (QDs) in the gate oxide were fabricated as efficient blue to near ultraviolet phototransistors for light detection and amplification. The drain current measured under 405 nm light irradiation of 25 μW improves ~45% as compared to that measured in darkness at VGS = -3 V. The poly-Si TFTs exhibited strong photoresponses in drive current under 405~450 nm light illumination, resulting from photoexcited holes in Ge QDs flow into the channel layer of the transistor via the gate bias to increase the channel mobile carriers.

Original languageEnglish
Title of host publication2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
Pages48-50
Number of pages3
DOIs
StatePublished - 10 Nov 2008
Event2008 8th IEEE Conference on Nanotechnology, IEEE-NANO - Arlington, TX, United States
Duration: 18 Aug 200821 Aug 2008

Publication series

Name2008 8th IEEE Conference on Nanotechnology, IEEE-NANO

Conference

Conference2008 8th IEEE Conference on Nanotechnology, IEEE-NANO
CountryUnited States
CityArlington, TX
Period18/08/0821/08/08

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  • Cite this

    Tseng, S. S., Chen, I. H., & Li, P-W. (2008). Photoresponses in poly-Si phototransistors incorporating germanium quantum dots in the gate dielectrics. In 2008 8th IEEE Conference on Nanotechnology, IEEE-NANO (pp. 48-50). [4617004] (2008 8th IEEE Conference on Nanotechnology, IEEE-NANO). https://doi.org/10.1109/NANO.2008.22