Photonic crystal surface emitting lasers with quantum dot active region

Tzu Shan Chen, Zong Lin Li, Ming Yang Hsu, Kuo-Jui Lin*, Sheng-Di Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

GaAs-based InAs/InGaAs/GaAs quantum dot (QD) photonic crystal (PC) surface emitting lasers of 1.3 μmwavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Laser devices are characterized in terms of PC parameters and temperaturedependent measurements are also carried out. The impact of wavelength detuning between PC resonant wavelength and QD gain peak is manifested in the experiments. Moreover, simplified simulation reveals that etched PC depth plays an even more critical role in active region of QD compared to that of quantum well.

Original languageEnglish
Article number8016584
Pages (from-to)4547-4552
Number of pages6
JournalJournal of Lightwave Technology
Volume35
Issue number20
DOIs
StatePublished - 15 Oct 2017

Keywords

  • Optical pumping
  • Photonic crystals
  • Quantum dots
  • Semiconductor lasers
  • Surface emitting lasers

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