Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material

Hsiang-Ting Lin, Kung-Shu Hsu, Chih-Chi Chang, Wei-Hsun Lin, Shih-Yen Lin, Shu-Wei Chang, Yia-Chung Chang, Min-Hsiung Shih*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The optical emission from type-II semiconductor nanostructures is influenced by the long carrier lifetime and can exhibit remarkable thermal stability. In this study, utilizing a high quality photonic crystal circular nanobeam cavity with a high quality factor and a sub-micrometer mode volume, we demonstrated an ultra-compact semiconductor laser with type-II gallium antimonide/gallium arsenide quantum rings (GaSb/GaAs QRs) as the gain medium. The lasing mode localized around the defect region of the nanobeam had a small modal volume and significant coupling with the photons emitted by QRs. It leads the remarkable shortening of carrier lifetime observed from the time-resolved photoluminescence (TRPL) and a high Purcell factor. Furthermore, a high characteristic temperature of 114K was observed from the device. The lasing performances indicated the type-II QRs laser is suitable for applications of photonic integrated circuit and bio-detection applications.

Original languageEnglish
Article number4757
Number of pages9
JournalScientific reports
Volume10
Issue number1
DOIs
StatePublished - 16 Mar 2020

Keywords

  • AUGER RECOMBINATION
  • MICRODISK LASERS
  • TEMPERATURE
  • NANOCAVITIES
  • SUPPRESSION
  • OPERATION
  • STATES
  • DEFECT
  • DOTS

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