Photon Generation in Forward-Biased Silicon p-n Junctions

T. C. Ong, K. W. Terrill, S. Tam, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Photons are generated by forward biasing a silicon p-n junction at 10-5 ~ 10-4 quantum efficiency through radiative recombination. At large distances from the forward-biased junction, leakage currents of magnitudes significant for some VLSI circuits can appear due to the substrate minority carriers generated by the photons. The effective decay length of the measured leakage current is about several hundred to one thousand micrometers. The effects of forward biasing an input node or a parasitic lateral bipolar transistor are, therefore, longer ranged than commonly assumed.

Original languageEnglish
Pages (from-to)460-462
Number of pages3
JournalIEEE Electron Device Letters
Volume4
Issue number12
DOIs
StatePublished - 1 Jan 1983

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