Photoluminescence study of interdot carrier transfer on strain-relaxed InAs quantum dots

Chen Hao Chiang*, You Cheng Chang, Yue Han Wu, Meng Chien Hsieh, Cheng Hong Yang, Jia Feng Wang, Li Chang, Jenn-Fang Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Photoluminescence (PL) properties of the strain relaxed InAs quantum dots (QDs) are studied as a function of temperature from 10 to 300 K. Two groups of QDs induced by strain relaxation are observed in the PL spectra. The PL peak position of the relaxed (non-relaxed) QDs locates at a higher (lower) energy. TEM image prove QDs are distributed into two groups and indicate the QDs relax the strain by diffusing indium to GaAs. In the 120-200 K temperature range, there are abnormal temperature behaviors attributed to the carrier transfer from the relaxed to non-relaxed QDs.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages515-516
Number of pages2
DOIs
StatePublished - 1 Dec 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

Keywords

  • Bimodal distributions
  • InAs quantum dot
  • Interdot carrier transfer
  • Molecular beam epitaxy
  • TEM Analysis

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