Photoluminescence study for thermal- and impurity-induced order-disorder transformations in Ga0.5In0.5P epilayers grown by metalorganic chemical vapor deposition

Ray-Hua Horng*, L. C. Haung, M. K. Lee

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

3 Scopus citations

Abstract

Thermal- and impurity-induced order-disorder transformations of Ga0.5In0.5P epilayers grown by metalorganic chemical vapor deposition have been investigated by photoluminescence. The energy gap splitting was observed during the transition from ordering to disordering. This is due to the variation of the valence-band spin-orbital split resulting from the interband reaction. The photoluminescence depth profile of the epilayer (incompletely transferred to disordering) is used to explain the phase transformation. A defect-associated order-disorder transformation model has been proposed.

Original languageEnglish
Pages (from-to)73-76
Number of pages4
JournalMaterials Chemistry and Physics
Volume32
Issue number1
DOIs
StatePublished - 1 Jan 1992

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