Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy

W. C. Ke*, C. P. Fu, C. Y. Chen, L. Lee, C. S. Ku, Wu-Ching Chou, Wen-Hao Chang, M. C. Lee, Wei-Kuo Chen, W. J. Lin, Y. C. Cheng

*Corresponding author for this work

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Abstract

Photoluminescence (PL) properties of InN dots embedded in GaN were investigated. We observed a systematic blueshift in the emission energy as the average dot height was reduced. The widely size-tunable emission energy can be ascribed to the size quantization effect. Temperature-dependent PL measurements show that the emission peak energies of the dots are insensitive to temperature, as compared with that of bulk film, indicating the localization of carriers in the dots. A reduced quenching of the PL from the InN dots was also observed, implying superior emission properties for the embedded InN dot structures.

Original languageEnglish
Article number191913
JournalApplied Physics Letters
Volume88
Issue number19
DOIs
StatePublished - 23 May 2006

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