Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy

S. M. Liao*, J. H. Wen, Wu-Ching Chou, S. M. Lan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Thin films of gallium nitride (GaN) were successfully prepared by our atmospheric pressure (AP) organometallic vapor phase epitaxy (OMVPE) system using GaN buffer layer over basal plane (0001) sapphire substrates. In the present study, strong band-edge photoluminescence (PL) in GaN films is observed. The variations of the growth temperature and ammonia/trimethylgallium (NH3/TMG) mass flow ratio with the full width at half maximum (FWHM) of band-edge luminescence (IBE), respectively, indicate that we could obtain ranges of the growth temperature and the NH3/TMG ratio to have high quality GaN single crystal. The band-edge to deep-level luminescence (IDL) ratio (IBE/IDL) also reveals that we could obtain optimized appropriate growth temperature and the supply of active nitrogen of excellent optical properties.

Original languageEnglish
Pages (from-to)205-210
Number of pages6
JournalMaterials Science and Engineering B
Volume48
Issue number3
DOIs
StatePublished - 29 Aug 1997

Keywords

  • Gallium nitride (GaN)
  • Organometallic vapor phase epitaxy (OMVPE)
  • Photoluminescence (PL)

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