Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence

H. Y. Huang, C. H. Chuang, C. K. Shu, Y. C. Pan, W. H. Lee, Wei-Kuo Chen, W. H. Chen, M. C. Lee

Research output: Contribution to journalArticlepeer-review

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Abstract

We have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic P-hole traps. From the Arrhenius plot, the hole binding energy of ∼180meV and the exciton localization energy of 28 meV were obtained. According to first-principle total-energy calculations, the implantation process likely introduced NI and P-related defects. By using photoluminescence excitation technique, we found that the P-implantation-induced localized states not only increase the yellow luminescence but also suppress the transitions from the free carriers to deep levels.

Original languageEnglish
Pages (from-to)3349-3351
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number18
DOIs
StatePublished - 6 May 2002

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