Photoexcitation effects on scanning tunneling microscope images of surface oxide layer of titanium

Hiroyuki Sugimura; Noboru Kitamura; Hiroshi Masuhara

doi:10.1143/JJAP.31.L1506

Photoexcitation effects on scanning tunneling microscope images of surface oxide layer of titanium

Hiroyuki Sugimura, Noboru Kitamura, Hiroshi Masuhara^*

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Scanning tunneling microscopy (STM) was applied to observe a surface oxide layer of titanium in air. When a sample bias voltage was set at —0.2 V, the STM tip penetrated into the surface oxide damaged the sample, while clear and stable images of the surface Ti0₂ layer were obtained under photoexcitation. The results were discussed in terms of enhanced electric conductivity of the oxide layer under photoexcitation.

Original language	English
Pages (from-to)	L1506-L1508
Journal	Japanese Journal of Applied Physics
Volume	31
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.31.L1506
State	Published - 1 Jan 1992

Keywords

Photoexcitation effect
Scanning tunneling microscopy
Semiconductor
Titanium
Titanium dioxide

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title = "Photoexcitation effects on scanning tunneling microscope images of surface oxide layer of titanium",

abstract = "Scanning tunneling microscopy (STM) was applied to observe a surface oxide layer of titanium in air. When a sample bias voltage was set at —0.2 V, the STM tip penetrated into the surface oxide damaged the sample, while clear and stable images of the surface Ti02 layer were obtained under photoexcitation. The results were discussed in terms of enhanced electric conductivity of the oxide layer under photoexcitation.",

keywords = "Photoexcitation effect, Scanning tunneling microscopy, Semiconductor, Titanium, Titanium dioxide",

author = "Hiroyuki Sugimura and Noboru Kitamura and Hiroshi Masuhara",

year = "1992",

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AU - Sugimura, Hiroyuki

AU - Kitamura, Noboru

AU - Masuhara, Hiroshi

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Scanning tunneling microscopy (STM) was applied to observe a surface oxide layer of titanium in air. When a sample bias voltage was set at —0.2 V, the STM tip penetrated into the surface oxide damaged the sample, while clear and stable images of the surface Ti02 layer were obtained under photoexcitation. The results were discussed in terms of enhanced electric conductivity of the oxide layer under photoexcitation.

AB - Scanning tunneling microscopy (STM) was applied to observe a surface oxide layer of titanium in air. When a sample bias voltage was set at —0.2 V, the STM tip penetrated into the surface oxide damaged the sample, while clear and stable images of the surface Ti02 layer were obtained under photoexcitation. The results were discussed in terms of enhanced electric conductivity of the oxide layer under photoexcitation.

KW - Photoexcitation effect

KW - Scanning tunneling microscopy

KW - Semiconductor

KW - Titanium

KW - Titanium dioxide

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DO - 10.1143/JJAP.31.L1506

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