Photoexcitation effects on scanning tunneling microscope images of surface oxide layer of titanium

Hiroyuki Sugimura, Noboru Kitamura, Hiroshi Masuhara*

*Corresponding author for this work

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Scanning tunneling microscopy (STM) was applied to observe a surface oxide layer of titanium in air. When a sample bias voltage was set at —0.2 V, the STM tip penetrated into the surface oxide damaged the sample, while clear and stable images of the surface Ti02 layer were obtained under photoexcitation. The results were discussed in terms of enhanced electric conductivity of the oxide layer under photoexcitation.

Original languageEnglish
Pages (from-to)L1506-L1508
JournalJapanese Journal of Applied Physics
Volume31
Issue number10
DOIs
StatePublished - 1 Jan 1992

Keywords

  • Photoexcitation effect
  • Scanning tunneling microscopy
  • Semiconductor
  • Titanium
  • Titanium dioxide

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