Photoerasable organic nonvolatile memory devices based on hafnium silicate insulators

Fang-Chung Chen*, Hsiao Fen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We have prepared photoerasable organic nonvolatile memories using high-dielectric (high- k) hafnium silicate as device insulators. The high- k material can effectively lower the operating voltage of the organic memory devices. The nonvolatile memory can be written by applying a gate bias and be effectively erased by photon illumination. The spectral study of the photoinduced recovery effect indicated that the erasing mechanism should be relevant to the recombination between the trapped charges and the photogenerated exctions.

Original languageEnglish
Article number6053997
Pages (from-to)1740-1742
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number12
DOIs
StatePublished - 1 Dec 2011

Keywords

  • Absorption
  • High-k gate dielectrics
  • Nonvolatile memory
  • Organic semiconductors

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