We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum Δα ∼ 14400 cm-1, which is 2.6 times larger than the maximum Δα ∼ 5400 cm -1 of the SQW sample.
|Number of pages||3|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|State||Published - 31 May 2004|
|Event||2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan|
Duration: 31 May 2004 → 4 Jun 2004