Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy

T. S. Lay*, P. P. Shen, E. Y. Lin, K. M. Kong, L. P. Chen, J. S. Wang, Kuo-Jui Lin, J. Y. Chi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

We report the photocurrent and differential absorption spectra of an InGaAsN single- and a double-quantum-well (SQW and DQW) structure measured at different reverse bias. The DQW structure shows an additional enhancement in electroabsorption of a maximum Δα ∼ 14400 cm-1, which is 2.6 times larger than the maximum Δα ∼ 5400 cm -1 of the SQW sample.

Original languageEnglish
Pages (from-to)278-280
Number of pages3
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs
StatePublished - 1 Dec 2004
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: 31 May 20044 Jun 2004

Fingerprint Dive into the research topics of 'Photocurrent and differential absorption spectra of InGaAsN single- And double-quantum-well structures grown by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this