Photoconductivity in BiFeO3 thin films

S. R. Basu*, L. W. Martin, Ying-hao Chu, M. Gajek, R. Ramesh, R. C. Rai, X. Xu, J. L. Musfeldt

*Corresponding author for this work

Research output: Contribution to journalArticle

378 Scopus citations


The optical properties of epitaxial BiFe O3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17 eV, a direct gap (2.667±0.005 eV at 300 K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFe O3 films under illumination from a 100 mW cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1 Torr. Large increases in photoconductivity are observed in light.

Original languageEnglish
Article number091905
JournalApplied Physics Letters
Issue number9
StatePublished - 14 Mar 2008

Fingerprint Dive into the research topics of 'Photoconductivity in BiFeO<sub>3</sub> thin films'. Together they form a unique fingerprint.

  • Cite this

    Basu, S. R., Martin, L. W., Chu, Y., Gajek, M., Ramesh, R., Rai, R. C., Xu, X., & Musfeldt, J. L. (2008). Photoconductivity in BiFeO3 thin films. Applied Physics Letters, 92(9), [091905].