Photoconductivity in BiFeO3 thin films

S. R. Basu*, L. W. Martin, Ying-hao Chu, M. Gajek, R. Ramesh, R. C. Rai, X. Xu, J. L. Musfeldt

*Corresponding author for this work

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Abstract

The optical properties of epitaxial BiFe O3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17 eV, a direct gap (2.667±0.005 eV at 300 K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFe O3 films under illumination from a 100 mW cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1 Torr. Large increases in photoconductivity are observed in light.

Original languageEnglish
Article number091905
JournalApplied Physics Letters
Volume92
Issue number9
DOIs
StatePublished - 14 Mar 2008

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    Basu, S. R., Martin, L. W., Chu, Y., Gajek, M., Ramesh, R., Rai, R. C., Xu, X., & Musfeldt, J. L. (2008). Photoconductivity in BiFeO3 thin films. Applied Physics Letters, 92(9), [091905]. https://doi.org/10.1063/1.2887908