Photoconductance transient response in polycrystalline silicon

E. Poon*, Wei Hwang, E. S. Yang, H. L. Evans

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The photoconductance transient response in polycrystalline silicon has been studied theoretically and experimentally. Shockley-Read-Hall statistics are used to describe the emission and capture processes at the grain-boundary traps. Under appropriate conditions, the minority carrier capture and emission time constants of the grain-boundary trap can be directly obtained from the photoconductance transient response. The photoconductance method is therefore useful for studying grain-boundary deep level states. The special case when a focused laser spot is employed is also discussed. From the experimental data obtained from large-grain Wacker polycrystalline silicon, we have discovered a donor-like level at 0.48 eV below the conduction band with a concentration of 2×1010 cm-2. The electron (minority carrier) lifetime is found to be about 6×10- 10-10-9 s.

Original languageEnglish
Pages (from-to)338-344
Number of pages7
JournalJournal of Applied Physics
Volume57
Issue number2
DOIs
StatePublished - 1 Dec 1985

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