Photo resist removal process using wet treatment after plasma doping

Issui Aiba*, Cheng Guo Jin, Yuichiro Sasaki, Kazuo Tsutsui, Hideki Tamura, Katsumi Okashita, Hiroyuki Ito, Bunji Mizuno, Parhat Ahmet, Kuniyuki Kakushima, Hiroshi Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photo resist removal after plasma doping (PD) by wet process using SPM solution was investigated. Photo resist patterns exposed to the plasma in the PD process were confirmed to be removed by the SPM treatment although it takes longer time compared to those without plasma exposure. It was also found that the SPM treatment for the as-doped Si surface was preferable to maintain higher retained dose of boron.

Original languageEnglish
Title of host publicationProceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006
Pages295-296
Number of pages2
StatePublished - 2006
Event5th International Conference on Semiconductor Technology, ISTC 2006 - Shanghai, China
Duration: 21 Mar 200623 Mar 2006

Publication series

NameProceedings - Electrochemical Society
VolumePV 2006-03

Conference

Conference5th International Conference on Semiconductor Technology, ISTC 2006
CountryChina
CityShanghai
Period21/03/0623/03/06

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  • Cite this

    Aiba, I., Jin, C. G., Sasaki, Y., Tsutsui, K., Tamura, H., Okashita, K., Ito, H., Mizuno, B., Ahmet, P., Kakushima, K., & Iwai, H. (2006). Photo resist removal process using wet treatment after plasma doping. In Proceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006 (pp. 295-296). (Proceedings - Electrochemical Society; Vol. PV 2006-03).