Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots

T. N. Lin, M. R. Inciong, S. R.M.S. Santiago, T. W. Yeh, W. Y. Yang, C. T. Yuan, J. L. Shen*, Hao-Chung Kuo, C. H. Chiu

*Corresponding author for this work

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer process is caused by the work function difference between GQDs and GaN, which is verified by Kelvin probe measurements. We have also observed that photocurrent in GaN can be enhanced by 23-fold due to photo-induced doping with GQDs. The improved optical and transport properties from photo-induced doping are promising for applications in GaN-based optoelectronic devices.

Original languageEnglish
Article number23260
JournalScientific reports
Volume6
DOIs
StatePublished - 18 Mar 2016

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    Lin, T. N., Inciong, M. R., Santiago, S. R. M. S., Yeh, T. W., Yang, W. Y., Yuan, C. T., Shen, J. L., Kuo, H-C., & Chiu, C. H. (2016). Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots. Scientific reports, 6, [23260]. https://doi.org/10.1038/srep23260