Phosphorus-species-induced band-gap anomaly in InGaP grown by solid-source molecular-beam epitaxy

Yi Cheng Cheng*, Sien Chi, Kai-Feng Huang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We report on the growth of InGaP by solid-source molecular-beam epitaxy. It is revealed by photoluminescence (PL) that a lower effective band-gap energy appeared when a higher phosphorus cracker temperature was used. Temperature-dependent PL and polarized photoreflectance (PR) also exhibited a weaker atomic ordering effect when the phosphorus cracker temperature increased. Since the variation of the phosphorus cracker temperature significantly changed the P2/P4 ratio, we believe that a more chemically reactive P2 will not only incorporate more In atoms into the epilayer, but will also bring about a smaller composition fluctuation and weaker ordering effect. Therefore, InGaP grown under a more P2-rich condition probably has a higher In content which results in a lower band-gap energy instead of the ordering effect.

Original languageEnglish
Pages (from-to)736-739
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number2 A
DOIs
StatePublished - 1 Feb 2001

Keywords

  • InGaP
  • Ordering
  • Photoluminescence
  • Photoreflectance
  • SSMBE

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