Phosphorus Diffusion in Partially Crystallized Films of SiO2

D. R. Campbell, E. I. Alessandrini, King-Ning Tu, J. E. Lewis

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The diffusion of phosphorus into thin SiC>2 films on Si was studied to assess the significance of an anomalous, rapid diffusion mode. Diffusions were performed over a wide range of temperature and time using neutron-activated, red phosphorus diffusion sources. It was found that diffusion anneals in P vapors catalyzed a localized amorphous-to-crystalline transformation in the initially amorphous films, creating rapid diffusion paths at the interfaces between the crystalline islands and the surrounding amorphous matrix. The shape of the penetration profiles confirmed that interfaces contributed to the flux of P through the film. Both rapid and normal diffusion coefficients were determined and are discussed. Crystallization with subsequent rapid diffusion may be a contributing factor to the failure of SiO2 diffusion masks.

Original languageEnglish
Pages (from-to)1081-1085
Number of pages5
JournalJournal of the Electrochemical Society
Volume121
Issue number8
DOIs
StatePublished - 1 Jan 1974

Keywords

  • diffusion mask. a-crystobalite
  • interface diffusion
  • network diffusion

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