Phosphor-free white light from InGan blue and green light-emitting diode chips covered with semiconductor-conversion AlGaInP epilayer

Ray-Hua Horng*, Pin Han, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

A phosphor-free white lamp was fabricated using the InGaN-based blue and green light-emitting diode (LED) chips covered with semiconductor-conversion layer AlGalnP. The lamp can provide three bands: a 460-nm blue emission coming from the blue LED, a 555-nm green emission coming from the green LED, and 630-nm red emission coming from the excited AlGalnP epilayer. As 50 mA was injected into the white lamp at room temperature, the chromaticity coordinates and correlated color temperature (TC) are (0.338,0.335) and 5348 K, respectively. By separating injection current into blue and green LED chips, TC of lamp can be tuned from about 4000 K to 5400 K.

Original languageEnglish
Pages (from-to)1139-1141
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number13
DOIs
StatePublished - 1 Jul 2008

Keywords

  • AlGaInP
  • Chromaticity coordinates
  • Correlated color temperature
  • InGaN
  • Light-emitting diode (LED)
  • Phosphor-free white lamp

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