Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light

J. W. Shi*, H. Y. Huang, C. K. Wang, J. K. Sheu, W. C. Lai, Y. S. Wu, C. H. Chen, J. T. Chu, Hao-Chung Kuo, Wei Ping Lin, Tsung Hsun Yang, J. I. Chyi

*Corresponding author for this work

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED) structure that operates in the visible wavelengths and offers broadening and flattening optical bandwidth performance. The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure.

Original languageEnglish
Pages (from-to)2593-2595
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number24
DOIs
StatePublished - 15 Dec 2006

Keywords

  • GaN light-emitting-diode (LED)
  • White-light generation

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    Shi, J. W., Huang, H. Y., Wang, C. K., Sheu, J. K., Lai, W. C., Wu, Y. S., Chen, C. H., Chu, J. T., Kuo, H-C., Lin, W. P., Yang, T. H., & Chyi, J. I. (2006). Phosphor-free GaN-based transverse junction light emitting diodes for the generation of white light. IEEE Photonics Technology Letters, 18(24), 2593-2595. https://doi.org/10.1109/LPT.2006.887362