Phenomenological compact model for QM charge centroid in multigate FETs

Sriramkumar Venugopalan*, Muhammed A. Karim, Sayeef Salahuddin, Ali M. Niknejad, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

We present a phenomenological compact model of the inversion charge centroid considering both the structural and electrical confinements in multigate FETs. The developed new model shows a good match with Technology-CAD (TCAD) data for both physical parameters such as fin thickness in FinFET and wire radius in cylindrical FET, channel doping, and electrical bias variation. With the introduction of fitting parameters, the model is capable of handling hole and electron carriers, various channel materials, and process variations, such as fin shape, etc.

Original languageEnglish
Article number6482675
Pages (from-to)1480-1484
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume60
Issue number4
DOIs
StatePublished - 3 Apr 2013

Keywords

  • BSIM-CMG
  • charge centroid
  • cylindrical gate (CG)
  • double gate (DG)
  • effective oxide capacitance
  • FinFET
  • gate-all-around FET
  • multigate
  • nanowire FET
  • quantum-mechanical (QM) effects
  • surround gate
  • trigate

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