Phase transition behaviors of Mo- and nitrogen-doped Ge2 Sb 2 Te5 thin films investigated by in situ electrical measurements

Yu Jen Huang, Yen Chou Chen, Tsung-Eong Hsien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


Phase-change behaviors of Ge2 Sb2 Te5 (GST) thin films doped with molybdenum (Mo) or nitrogen (N) were investigated by utilizing in situ electrical property measurement, x-ray diffraction (XRD), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy. It was found that the Mo doping mainly reduces the resistivity level of amorphous GST while the N-doping raises both the resistivity levels of amorphous and crystalline GSTs. XRD and TEM analyses revealed that the element doping stabilizes the amorphous state of GST and suppresses the grain growth in GST films. This resulted in the increase in recrystallization temperature (T m) and activation energy (Ea) of amorphous-to-crystalline phase transition in GST layers, as revealed by the calculation in terms of Kissinger's theory. The results of data fitting into various percolation models and Johnson-Mehl-Avrami analysis indicated the heterogeneous feature of phase transition process in GST layers that the nucleation first occurs at the atmosphere/sample interface and the recrystallization front advances into the interior of sample in a layer-by-layer manner along the direction of surface normal.

Original languageEnglish
Article number034916
JournalJournal of Applied Physics
Issue number3
StatePublished - 28 Aug 2009

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