Phase transition behaviors of AgInSbTe-SiO2 nanocomposite thin films for phase-change memory applications

Yu Jen Huang*, Tzu Chin Chung, Chiung Hsin Wang, Tsung-Eong Hsien

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Phase-change kinetics, structure evolution and feasibility to phase-change memory (PCM) of Ag2In7Sb64Te27 (AIST) and its nanocomposite comprised of 85 wt.% AIST and 15 wt.% SiO 2 were presented. In-situ heating x-ray diffraction (XRD) indicated nanocomposite transforms from amorphous to HCP structure during heating and incorporation of SiO2 increases the recrystallization temperature (Tx) of samples (189°C for AIST and 223°C for nanocomposite). XRD and transmission electron microscopy (TEM) analyses both revealed the grain refinement in nanocomposite. Kissinger's analysis found the increase of activation energy (Ea) of phase transition in nanocomposite, denoting the SiO2 embedment restrains the grain growth of AIST during recrystallization. Johnson-Mehl-Avrami (JMA) theory revealed the decrease of Avrami exponent (n), indicating that the phase transition is prone to be heterogeneous since the dispersed SiO2 particles may provide additional nucleation sites. Static I-V measurement indicated that the switching threshold voltage (Vth) of nanocomposite device (1.65 V) is higher than that of the AIST device (1.10 V). Increase of dynamic resistance in nanocomposite device leads to the reduction of writing current. I-V analysis also confirmed the retardation of recrystallization in AIST due to the incorporation of SiO2 and the rise of Ea is able to enhance the thermal stability of amorphous state in PCM devices.

Original languageEnglish
Title of host publicationPhase-Change Materials for Memory and Reconfigurable Electronics Applications
Pages55-60
Number of pages6
DOIs
StatePublished - 1 Dec 2010
Event2010 MRS Spring Meeting - San Francisco, CA, United States
Duration: 5 Apr 20109 Apr 2010

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1251
ISSN (Print)0272-9172

Conference

Conference2010 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period5/04/109/04/10

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    Huang, Y. J., Chung, T. C., Wang, C. H., & Hsien, T-E. (2010). Phase transition behaviors of AgInSbTe-SiO2 nanocomposite thin films for phase-change memory applications. In Phase-Change Materials for Memory and Reconfigurable Electronics Applications (pp. 55-60). (Materials Research Society Symposium Proceedings; Vol. 1251). https://doi.org/10.1557/PROC-1251-H03-04