Phase transformation behavior of (Pb,La)(Zr,Sn,Ti)O3 and Pb (Nb,Zr,Sn,Ti)O3 antiferroelectric thin films deposited on LaNiO 3-buffered silicon substrates by sol-gel processing

Jiwei Zhai*, Bo Shen, Xi Yao, Zhengkui Xu, Xin Li, Haydn Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Antiferroelectric (Pb,La)(Zr,Sn,Ti)O3 (PLZST) and Pb(Nb,Zr,Sn,Ti)O3 (PNZST) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si substrates by a sol-gel processing. These films showed highly preferred (100) orientation due to the grain-on-grain local epitaxial growth. The PLZST films close to the AFE-FE phase boundary showed the electric-field-induced ferroelectric (FE) state, which could return back to its original AFE state only when the thermal activation was high enough. The AFE to FE phase transformation in PNZST films can be adjusted by the dc bias field in temperature. Phase transformation behavior of PNZST and PLZST antiferroelectric thin films were investigated as a function of temperature and dc bias field.

Original languageEnglish
Pages (from-to)369-373
Number of pages5
JournalJournal of Sol-Gel Science and Technology
Volume42
Issue number3
DOIs
StatePublished - 1 Jun 2007

Keywords

  • Antiferroelectric
  • Electrical property
  • Phase transformation
  • Sol-gel process
  • Thin film

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