Phase transformation and optical characteristics of porous germanium thin film

T. S. Ko*, J. Shieh, M. C. Yang, Tien-chang Lu, Hao-Chung Kuo, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations

Abstract

In this study, we proposed a method to prepare GeO2 by treating porous Ge thin film with thermal annealing in O2 ambient. After annealing, the morphological transformation from porous thin film to an island structure was observed. The crystallization and composition of the porous Ge thin film prepared using different annealing time in O2 ambient were confirmed by X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectra. Initial Ge composition was gradually oxidized to GeO 2 with increasing annealing time. Comparing the photoluminescence (PL) results between Ge and GeO2 , it was found that the visible photoluminescence originated from the germanium oxide. Photoluminescence measurements obtained at different temperatures exhibited a maximum integrated PL intensity at around 200 K. A possible explanation for this behavior might be the competition between radiative recombination and nonradiative hopping process.

Original languageEnglish
Pages (from-to)2934-2938
Number of pages5
JournalThin Solid Films
Volume516
Issue number10
DOIs
StatePublished - 31 Mar 2008

Keywords

  • Chemical vapor deposition
  • Germanium
  • Phase transitions
  • Photoluminescence

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