Phase transformation and electric field tunable pyroelectric behavior of Pb (Nb,Zr,Sn,Ti)O3 and (Pb,La) (Zr,Sn,Ti)O3 antiferroelectric thin films

Zhengkui Xu; Jiwei Zhai; Wai Hung Chan; H. D. Chen

doi:10.1063/1.2191413

Phase transformation and electric field tunable pyroelectric behavior of Pb (Nb,Zr,Sn,Ti)O₃ and (Pb,La) (Zr,Sn,Ti)O₃ antiferroelectric thin films

Zhengkui Xu^*, Jiwei Zhai, Wai Hung Chan, H. D. Chen

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

Phase transformation and pyroelectric behavior of Pb (Nb,Zr,Sn,Ti) O3 (PNZST) and (Pb,La) (Zr,Sn,Ti) O3 (PLZST) antiferroelectric (AFE) thin films were investigated as a function of temperature and dc bias field. A large pyroelectric coefficient of the order of ∼3× 10-7 C cm-2 K-1 was realized at the ferroelectric (FE) to AFE and the AFE to FE phase transformations in the PLZST and PNZST films, respectively. The phase transformation temperature could be readily adjusted by dc bias for both films. The large pyroelectric coefficient combined with excellent dc tunability at the phase transformation temperature makes these two systems promising candidates for uncooled tunable pyroelectric thermal sensing applications.

Original language	English
Article number	132908
Journal	Applied Physics Letters
Volume	88
Issue number	13
DOIs	https://doi.org/10.1063/1.2191413
State	Published - 10 Apr 2006

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@article{dbc7bdf36cde4af7bdc89b2cd2756327,

title = "Phase transformation and electric field tunable pyroelectric behavior of Pb (Nb,Zr,Sn,Ti)O3 and (Pb,La) (Zr,Sn,Ti)O3 antiferroelectric thin films",

abstract = "Phase transformation and pyroelectric behavior of Pb (Nb,Zr,Sn,Ti) O3 (PNZST) and (Pb,La) (Zr,Sn,Ti) O3 (PLZST) antiferroelectric (AFE) thin films were investigated as a function of temperature and dc bias field. A large pyroelectric coefficient of the order of ∼3× 10-7 C cm-2 K-1 was realized at the ferroelectric (FE) to AFE and the AFE to FE phase transformations in the PLZST and PNZST films, respectively. The phase transformation temperature could be readily adjusted by dc bias for both films. The large pyroelectric coefficient combined with excellent dc tunability at the phase transformation temperature makes these two systems promising candidates for uncooled tunable pyroelectric thermal sensing applications.",

author = "Zhengkui Xu and Jiwei Zhai and Chan, {Wai Hung} and Chen, {H. D.}",

year = "2006",

month = apr,

day = "10",

doi = "10.1063/1.2191413",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Phase transformation and electric field tunable pyroelectric behavior of Pb (Nb,Zr,Sn,Ti)O3 and (Pb,La) (Zr,Sn,Ti)O3 antiferroelectric thin films

AU - Xu, Zhengkui

AU - Zhai, Jiwei

AU - Chan, Wai Hung

AU - Chen, H. D.

PY - 2006/4/10

Y1 - 2006/4/10

N2 - Phase transformation and pyroelectric behavior of Pb (Nb,Zr,Sn,Ti) O3 (PNZST) and (Pb,La) (Zr,Sn,Ti) O3 (PLZST) antiferroelectric (AFE) thin films were investigated as a function of temperature and dc bias field. A large pyroelectric coefficient of the order of ∼3× 10-7 C cm-2 K-1 was realized at the ferroelectric (FE) to AFE and the AFE to FE phase transformations in the PLZST and PNZST films, respectively. The phase transformation temperature could be readily adjusted by dc bias for both films. The large pyroelectric coefficient combined with excellent dc tunability at the phase transformation temperature makes these two systems promising candidates for uncooled tunable pyroelectric thermal sensing applications.

AB - Phase transformation and pyroelectric behavior of Pb (Nb,Zr,Sn,Ti) O3 (PNZST) and (Pb,La) (Zr,Sn,Ti) O3 (PLZST) antiferroelectric (AFE) thin films were investigated as a function of temperature and dc bias field. A large pyroelectric coefficient of the order of ∼3× 10-7 C cm-2 K-1 was realized at the ferroelectric (FE) to AFE and the AFE to FE phase transformations in the PLZST and PNZST films, respectively. The phase transformation temperature could be readily adjusted by dc bias for both films. The large pyroelectric coefficient combined with excellent dc tunability at the phase transformation temperature makes these two systems promising candidates for uncooled tunable pyroelectric thermal sensing applications.

UR - http://www.scopus.com/inward/record.url?scp=33645527773&partnerID=8YFLogxK

U2 - 10.1063/1.2191413

DO - 10.1063/1.2191413

M3 - Article

AN - SCOPUS:33645527773

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 132908

ER -