Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD

Tien Tung Luong*, Yen Teng Ho, Yuen Yee Wong, Shane Chang, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

High crystalline quality AlGaN films were grown on GaN templates by metalorganic chemical vapor deposition (MOCVD). Inhomogeneous distributions of Al compositions in both the vertical and lateral growth direction caused by the strong gas-phase pre-reaction occurring between Al precursors and NH3 were suppressed by optimizing the growth conditions. The residual strain in AlGaN/GaN induced by lattice mismatch, which results in the degradation of crystallinity, was modulated by varying thickness of a high temperature (HT) AlN interlayer (IL) inserted between AlGaN and GaN layers. Both the crystalline quality and Al-incorporation into the AlGaN are influenced by the residual strain related to the AlN IL thickness. Lastly, the understanding of the AlGaN growth and of the strain modification was employed to grow an AlGaN/GaN HEMT structure showing good electrical characteristics and uniformity.

Original languageEnglish
Pages (from-to)286-292
Number of pages7
JournalMicroelectronics Reliability
Volume83
DOIs
StatePublished - 1 Apr 2018

Keywords

  • AlGaN
  • AlGaN/GaN HEMTs
  • AlN interlayer
  • Phase separation
  • Strain modulation

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