Phase-change kinetics of Bi-Fe-(N) layer for high-speed write-once optical recording

Sung Hsiu Huang, Yu Jen Huang, Hung Chuan Mai, Tsung-Eong Hsien

Research output: Contribution to journalArticlepeer-review


In this work, we present the phase-change kinetics of Bi-Fe-(N) layers for write-once optical recording. In situ reflectivity measurement indicated that the phase-change temperature (Tx) of the Bi-Fe-(N) layers is strongly related to the heating rate. The Tx's were about 170°C at low heating rates and approached the melting point of the Bi phase (i.e., 271.4°C) at high rate of heating provided by laser heating. For a 100-nm-thick Bi-Fe-(N) layer, Kissinger's analysis showed that the activation energy of phase transition (Ea) = 1.24 eV, while the analysis of isothermal phase transition in terms of the Johnson-Mehl-Avrami (JMA) theory showed that the average Avrami exponent (m) = 2.2 and the appropriate activation energy (Dlata;H) = 5.15 eV. With the aid of X-ray diffraction (XRD) analysis, a two-dimensional phase transition behavior in the Bi-Fe-(N) layersinitiated by the melting of the Bi-rich phase was confirmed. For optical disk samples with optimized disk structure and write strategy, the signal properties far exceeding the write-once disk test specifications were achieved. Satisfactory signal properties indicated that the Bi-Fe-(N) systemis a promising alternative for high-speed write-once recording in the Blu-ray era.

Original languageEnglish
Article number042601
JournalJapanese Journal of Applied Physics
Issue number4 PART 1
StatePublished - 1 Apr 2011

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