PH sensing characteristics of extended-gate field-effect transistor based on al-doped ZnO nanostructures hydrothermally synthesized at low temperatures

Po Yu Yang*, Jyh Liang Wang, Po Chun Chiu, Jung Chuan Chou, Cheng Wei Chen, Hung Hsien Li, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

The pH sensing properties of an extended-gate field-effect transistor (EGFET) with Al-doped ZnO (AZO) nanostructures are investigated. The AZO nanostructures with different Al dosages were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85 -{\circ}C. The pH sensing characteristics of pH-EGFET sensors with an Al dosage of 1.98 at% can exhibit a higher voltage sensitivity of 57.95 mV/pH, a larger linearity of 0.9998, and a wide sensing range of pH 1-13, attributed to the well-aligned nanowire (NW) array, superior crystallinity, less structural defects, and better conductivity. Consequently, the hydrothermally grown AZO NWs demonstrate superior pH sensing characteristics and reveal the potentials for flexible and disposable biosensors.

Original languageEnglish
Article number6020735
Pages (from-to)1603-1605
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number11
DOIs
StatePublished - 1 Nov 2011

Keywords

  • Al-doped zinc oxide (AZO)
  • Extended-gate field-effect transistor (EGFET)
  • Hydrothermal method
  • Low temperature

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