PH sensing characteristics of extended-gate field-effect transistor based on al-doped ZnO nanostructures hydrothermally synthesized at low temperatures

Po Yu Yang; Jyh Liang Wang; Po Chun Chiu; Jung Chuan Chou; Cheng Wei Chen; Hung Hsien Li; Huang-Chung Cheng

doi:10.1109/LED.2011.2164230

PH sensing characteristics of extended-gate field-effect transistor based on al-doped ZnO nanostructures hydrothermally synthesized at low temperatures

Po Yu Yang^*, Jyh Liang Wang, Po Chun Chiu, Jung Chuan Chou, Cheng Wei Chen, Hung Hsien Li, Huang-Chung Cheng

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Contribution to journal › Article

29 Scopus citations

Abstract

The pH sensing properties of an extended-gate field-effect transistor (EGFET) with Al-doped ZnO (AZO) nanostructures are investigated. The AZO nanostructures with different Al dosages were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85 -{\circ}C. The pH sensing characteristics of pH-EGFET sensors with an Al dosage of 1.98 at% can exhibit a higher voltage sensitivity of 57.95 mV/pH, a larger linearity of 0.9998, and a wide sensing range of pH 1-13, attributed to the well-aligned nanowire (NW) array, superior crystallinity, less structural defects, and better conductivity. Consequently, the hydrothermally grown AZO NWs demonstrate superior pH sensing characteristics and reveal the potentials for flexible and disposable biosensors.

Original language	English
Article number	6020735
Pages (from-to)	1603-1605
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/LED.2011.2164230
State	Published - 1 Nov 2011

Keywords

Al-doped zinc oxide (AZO)
Extended-gate field-effect transistor (EGFET)
Hydrothermal method
Low temperature

Access to Document

10.1109/LED.2011.2164230

Link to publication in Scopus

Fingerprint Dive into the research topics of 'PH sensing characteristics of extended-gate field-effect transistor based on al-doped ZnO nanostructures hydrothermally synthesized at low temperatures'. Together they form a unique fingerprint.

Cite this

@article{f3151ef1d3424cfb85cc8fd4593852e1,

title = "PH sensing characteristics of extended-gate field-effect transistor based on al-doped ZnO nanostructures hydrothermally synthesized at low temperatures",

abstract = "The pH sensing properties of an extended-gate field-effect transistor (EGFET) with Al-doped ZnO (AZO) nanostructures are investigated. The AZO nanostructures with different Al dosages were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85 -{\circ}C. The pH sensing characteristics of pH-EGFET sensors with an Al dosage of 1.98 at% can exhibit a higher voltage sensitivity of 57.95 mV/pH, a larger linearity of 0.9998, and a wide sensing range of pH 1-13, attributed to the well-aligned nanowire (NW) array, superior crystallinity, less structural defects, and better conductivity. Consequently, the hydrothermally grown AZO NWs demonstrate superior pH sensing characteristics and reveal the potentials for flexible and disposable biosensors.",

keywords = "Al-doped zinc oxide (AZO), Extended-gate field-effect transistor (EGFET), Hydrothermal method, Low temperature",

author = "Yang, {Po Yu} and Wang, {Jyh Liang} and Chiu, {Po Chun} and Chou, {Jung Chuan} and Chen, {Cheng Wei} and Li, {Hung Hsien} and Huang-Chung Cheng",

year = "2011",

month = nov,

day = "1",

doi = "10.1109/LED.2011.2164230",

language = "English",

volume = "32",

pages = "1603--1605",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

PH sensing characteristics of extended-gate field-effect transistor based on al-doped ZnO nanostructures hydrothermally synthesized at low temperatures. / Yang, Po Yu; Wang, Jyh Liang; Chiu, Po Chun; Chou, Jung Chuan; Chen, Cheng Wei; Li, Hung Hsien; Cheng, Huang-Chung.

In: IEEE Electron Device Letters, Vol. 32, No. 11, 6020735, 01.11.2011, p. 1603-1605.

Research output: Contribution to journal › Article

TY - JOUR

T1 - PH sensing characteristics of extended-gate field-effect transistor based on al-doped ZnO nanostructures hydrothermally synthesized at low temperatures

AU - Yang, Po Yu

AU - Wang, Jyh Liang

AU - Chiu, Po Chun

AU - Chou, Jung Chuan

AU - Chen, Cheng Wei

AU - Li, Hung Hsien

AU - Cheng, Huang-Chung

PY - 2011/11/1

Y1 - 2011/11/1

N2 - The pH sensing properties of an extended-gate field-effect transistor (EGFET) with Al-doped ZnO (AZO) nanostructures are investigated. The AZO nanostructures with different Al dosages were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85 -{\circ}C. The pH sensing characteristics of pH-EGFET sensors with an Al dosage of 1.98 at% can exhibit a higher voltage sensitivity of 57.95 mV/pH, a larger linearity of 0.9998, and a wide sensing range of pH 1-13, attributed to the well-aligned nanowire (NW) array, superior crystallinity, less structural defects, and better conductivity. Consequently, the hydrothermally grown AZO NWs demonstrate superior pH sensing characteristics and reveal the potentials for flexible and disposable biosensors.

AB - The pH sensing properties of an extended-gate field-effect transistor (EGFET) with Al-doped ZnO (AZO) nanostructures are investigated. The AZO nanostructures with different Al dosages were synthesized on AZO/glass substrate via a simple hydrothermal growth method at 85 -{\circ}C. The pH sensing characteristics of pH-EGFET sensors with an Al dosage of 1.98 at% can exhibit a higher voltage sensitivity of 57.95 mV/pH, a larger linearity of 0.9998, and a wide sensing range of pH 1-13, attributed to the well-aligned nanowire (NW) array, superior crystallinity, less structural defects, and better conductivity. Consequently, the hydrothermally grown AZO NWs demonstrate superior pH sensing characteristics and reveal the potentials for flexible and disposable biosensors.

KW - Al-doped zinc oxide (AZO)

KW - Extended-gate field-effect transistor (EGFET)

KW - Hydrothermal method

KW - Low temperature

UR - http://www.scopus.com/inward/record.url?scp=80054995631&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2164230

DO - 10.1109/LED.2011.2164230

M3 - Article

AN - SCOPUS:80054995631

VL - 32

SP - 1603

EP - 1605

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

M1 - 6020735

ER -