Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell

Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Bhaskar Pattanayak, Chun Chieh Lin*, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 104 s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.

Original languageEnglish
Article number38LT02
JournalNanotechnology
Volume28
Issue number38
DOIs
StatePublished - 29 Aug 2017

Keywords

  • electrochemical metallization devices
  • Resistive switching
  • RRAM
  • zinc peroxide

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