Performances of Ni-induced lateral crystallization thin film transistors with 〈111〉 and 〈112〉 needle grains

Chih Yuan Hou*, Yew-Chuhg Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Thin-film transistors (TFTs) fabricated using 〈111〉 and 〈112〉 needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (μFE), 4-fold-higher on/off current ratio (Ion/Ioff), and 2.4-fold-lower leakage current (IOff) compared with those of the 111-TFT.

Original languageEnglish
Pages (from-to)5667-5670
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number7
DOIs
StatePublished - 7 Jul 2006

Keywords

  • Imprint
  • LTPS
  • Ni-metal-induced lateral crystallization
  • Poly-Si
  • Thin-film transistors

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