Thin-film transistors (TFTs) fabricated using 〈111〉 and 〈112〉 needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (μFE), 4-fold-higher on/off current ratio (Ion/Ioff), and 2.4-fold-lower leakage current (IOff) compared with those of the 111-TFT.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|State||Published - 7 Jul 2006|
- Ni-metal-induced lateral crystallization
- Thin-film transistors