To investigate the performance of the silicon ballistic nanowire MOSFET with diverse orientations and diameters, the subband structure of silicon nanowire has been calculated by using the tight binding simulator, and observed changes of minimum energy in the conduction and the valence subband and effective mass of electron and hole. This paper also presents a compact model, which is used in numerical evaluation of the current vs. voltage characteristics of ballistic devices. Finally, the drain saturation current of n- and p-channel device with different orientations and diameters are shown.
|Title of host publication||China Semiconductor Technology International Conference 2010, CSTIC 2010|
|Number of pages||6|
|State||Published - 2010|
|Event||China Semiconductor Technology International Conference 2010, CSTIC 2010 - Shanghai, China|
Duration: 18 Mar 2010 → 19 Mar 2010
|Conference||China Semiconductor Technology International Conference 2010, CSTIC 2010|
|Period||18/03/10 → 19/03/10|