A low-resistivity and low carbon concentration CVD TaN film has been realized by using a new precursor terbutylimido-tris-diethylamido tantalum (TBTDET). Results show that CVD TaN as a diffusion barrier for Cu has higher thermal stability up to 500°C than CVD TiN of 450°C.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|State||Published - 1 Dec 1995|
|Event||Proceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn|
Duration: 6 Jun 1995 → 8 Jun 1995