Performance of MOCVD tantalum nitride diffusion barrier for copper metallization

S. C. Sun*, M. H. Tsai, C. E. Tsai, Hsin-Tien Chiu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations


A low-resistivity and low carbon concentration CVD TaN film has been realized by using a new precursor terbutylimido-tris-diethylamido tantalum (TBTDET). Results show that CVD TaN as a diffusion barrier for Cu has higher thermal stability up to 500°C than CVD TiN of 450°C.

Original languageEnglish
Pages (from-to)29-30
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1 Dec 1995
EventProceedings of the 1995 Symposium on VLSI Technology - Kyoto, Jpn
Duration: 6 Jun 19958 Jun 1995

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