Performance of millimeter-wave GaInP IMPATT device at elevated temperature

Chin-Chun Meng; G. R. Liao

doi:10.1002/(SICI)1098-2760(19990320)20:6<422::AID-MOP16>3.0.CO;2-0

Performance of millimeter-wave GaInP IMPATT device at elevated temperature

Chin-Chun Meng^*, G. R. Liao

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

GaInP material has high breakdown electric fields, and thus is suitable for avalanche transit-time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT device has a power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice match and high etching selectivity between GaInP and GaAs materials.

Original language	English
Pages (from-to)	422-424
Number of pages	3
Journal	Microwave and Optical Technology Letters
Volume	20
Issue number	2-6
DOIs	https://doi.org/10.1002/(SICI)1098-2760(19990320)20:6<422::AID-MOP16>3.0.CO;2-0
State	Published - 1 Dec 1999

Keywords

GaInP
IMPATT device
Millimeter wave
Oscillator

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10.1002/(SICI)1098-2760(19990320)20:6<422::AID-MOP16>3.0.CO;2-0

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abstract = "GaInP material has high breakdown electric fields, and thus is suitable for avalanche transit-time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT device has a power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice match and high etching selectivity between GaInP and GaAs materials.",

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N2 - GaInP material has high breakdown electric fields, and thus is suitable for avalanche transit-time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT device has a power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice match and high etching selectivity between GaInP and GaAs materials.

AB - GaInP material has high breakdown electric fields, and thus is suitable for avalanche transit-time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT device has a power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice match and high etching selectivity between GaInP and GaAs materials.

KW - GaInP

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KW - Millimeter wave

KW - Oscillator

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Performance of millimeter-wave GaInP IMPATT device at elevated temperature

Abstract

Keywords

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