Performance of millimeter-wave GaInP IMPATT device at elevated temperature

Chin-Chun Meng*, G. R. Liao

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

GaInP material has high breakdown electric fields, and thus is suitable for avalanche transit-time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT device has a power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice match and high etching selectivity between GaInP and GaAs materials.

Original languageEnglish
Pages (from-to)422-424
Number of pages3
JournalMicrowave and Optical Technology Letters
Volume20
Issue number2-6
DOIs
StatePublished - 1 Dec 1999

Keywords

  • GaInP
  • IMPATT device
  • Millimeter wave
  • Oscillator

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