Abstract
GaInP material has high breakdown electric fields, and thus is suitable for avalanche transit-time device application. Millimeter-wave GaInP IMPATT devices at operating temperature (500 K) are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT device has a power density advantage when compared to conventional GaAs and Si IMPATT devices. The improvement in power density is about factor of 4 at 100 GHz. Moreover, GaInP IMPATT devices are easy to incorporate into GaAs millimeter-wave monolithic integrated circuit technology because of the lattice match and high etching selectivity between GaInP and GaAs materials.
Original language | English |
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Pages (from-to) | 422-424 |
Number of pages | 3 |
Journal | Microwave and Optical Technology Letters |
Volume | 20 |
Issue number | 2-6 |
DOIs | |
State | Published - 1 Dec 1999 |
Keywords
- GaInP
- IMPATT device
- Millimeter wave
- Oscillator