Performance of Flip-Chip Thin-Film GaN Light-Emitting Diodes With and Without Patterned Sapphires

Ray Hua Horng, Ray-Hua Horng, Hung Lieh Hu, Mu Tao Chu, Yu Li Tsai, Yao Jun Tsai, Chen Peng Hsu, Dong Sing Wuu

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

We report on improved device performance of flip-chip (FC) GaN-based light-emitting diodes (LEDs) by combining patterned sapphire substrate (PSS) and thin-film techniques. It was found that an FC LED grown on a conventional planar sapphire exhibits a power enhancement factor of only 36.3% after the thin-film processes of substrate removal and surface roughening. In contrast, the as-fabricated FC LED grown on a PSS showed a power enhancement factor of up to 62.3% without any postprocess as compared with the light output power of an original conventional FC LED. Further intensity improvement to 74.4% could be achieved for the FC LED/PSS sample with the thin-film processes.

Original languageEnglish
Pages (from-to)550-552
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number8
DOIs
StatePublished - 15 Apr 2010

Keywords

  • Flip-chip (FC)
  • patterned sapphire substrate (PSS)
  • thin-film technique

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